PESD3V3V4UW T/R NXP Semiconductors, PESD3V3V4UW T/R Datasheet - Page 14

• Manufacturer Part Number: PESD3V3V4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3V4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.3 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 2 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD3V3V4UW,115

NXP Semiconductors
11. Revision history
Table 11.
PESDXV4UF_G_W_3
Product data sheet
Document ID
PESDXV4UF_G_W_3
Modifications:
PESDXV4UG_SER_2
PESDXV4UW_SER_1
Revision history
Release date
20080128
20050407
20050422
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type numbers PESD3V3V4UF and PESD5V0V4UF added
Table 1 “Product
Figure
Section 9 “Packing
Section 10
Section 12 “Legal
7: added
“Soldering”: added
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 03 — 28 January 2008
overview”: added
information”: updated
Very low capacitance quadruple ESD protection diode arrays
information”: added
Change notice
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-
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PESDxV4UF/G/W
Supersedes
PESDXV4UG_SER_2
PESDXV4UW_SER_1
PESDXV4UG_SER_1
-
© NXP B.V. 2008. All rights reserved.
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