MT46H32M32LFCM-5 IT:A Micron Technology Inc, MT46H32M32LFCM-5 IT:A Datasheet - Page 61
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MT46H32M32LFCM-5 IT:A
Manufacturer Part Number
MT46H32M32LFCM-5 IT:A
Description
IC DDR SDRAM 1GBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H32M32LFCM-5 IT:A
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (32M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Organization
32Mx32
Density
1Gb
Address Bus
13b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
150mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 25: Random Read Accesses
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
n
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
61
t
DQSCK, and
D
n + 1
T2n
T2n
OUT
D
1Gb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
x
t
DQSQ.
D
n + 1
Don’t Care
T3n
T3n
D
x + 1
OUT
OUT
D
OUT
D
T4
T4
NOP
NOP
x
OUT
b
D
x + 1
T4n
T4n
OUT
D
b + 1
OUT
© 2007 Micron Technology, Inc. All rights reserved.
Transitioning Data
READ Operation
D
T5
T5
NOP
NOP
D
OUT
b
OUT
g
T5n
T5n
D
b + 1
D
g + 1
OUT
OUT