MT46H32M32LFCM-5 IT:A Micron Technology Inc, MT46H32M32LFCM-5 IT:A Datasheet - Page 19
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MT46H32M32LFCM-5 IT:A
Manufacturer Part Number
MT46H32M32LFCM-5 IT:A
Description
IC DDR SDRAM 1GBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H32M32LFCM-5 IT:A
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (32M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Organization
32Mx32
Density
1Gb
Address Bus
13b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
150mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 6: Capacitance (x16, x32) (Continued)
Note 1 applies to all the parameters in this table
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Parameter
Delta input capacitance: CK, CK#
Input capacitance: command and address
Delta input capacitance: command and address
Input/output capacitance: DQ, DQS, DM
Delta input/output capacitance: DQ, DQS, DM
Notes:
1. This parameter is sampled. V
2. The input capacitance per pin group will not differ by more than this maximum amount
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-
V
fact that they are matched in loading.
for any given device.
mum amount for any given device.
DDQ
/2, V
OUT
(peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the
Symbol
19
C
C
C
C
DCK
C
DIO
DI
IO
DD
I
/V
DDQ
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= 1.70–1.95V, f = 100 MHz, T
Min
1.5
1.5
–
–
–
Max
Electrical Specifications
0.25
3.0
0.5
4.5
0.5
© 2007 Micron Technology, Inc. All rights reserved.
A
Unit
= 25˚C, V
pF
pF
pF
pF
pF
OUT(DC)
Notes
2
2
3
=