PESD5V0V4UW T/R NXP Semiconductors, PESD5V0V4UW T/R Datasheet - Page 8

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PESD5V0V4UW T/R

Manufacturer Part Number
PESD5V0V4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0V4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.4 V
Clamping Voltage
13 V
Operating Voltage
5 V
Peak Surge Current
1.7 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
16 W
Factory Pack Quantity
4000
Part # Aliases
PESD5V0V4UW,115
NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 8. ESD clamping test setup and waveforms
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
IEC 61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C
Z
R
Z
Z
= 330
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
Device
Under
DUT
Test
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
450
RG 223/U
50
GND
GND
GND
coax
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
ATTENUATOR
10
PESDxV4UF/G/W
PESD3V3V4UF/G/W
PESD5V0V4UF/G/W
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
© NXP B.V. 2008. All rights reserved.
50
006aab125
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