PESD5V0V4UW T/R NXP Semiconductors, PESD5V0V4UW T/R Datasheet - Page 5

• Manufacturer Part Number: PESD5V0V4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0V4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Peak Surge Current: 1.7 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0V4UW,115

NXP Semiconductors
6. Characteristics
PESDXV4UF_G_W_3
Product data sheet
Table 9.
T
Symbol Parameter
Per diode
V
I
V
C
RM
amb
RWM
BR
d
= 25 C unless otherwise specified.
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
Characteristics
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
Conditions
V
V
I
f = 1 MHz
R
RWM
RWM
V
V
V
V
= 1 mA
R
R
R
R
= 0 V
= 3.3 V
= 0 V
= 5 V
= 3.3 V
= 5.0 V
PESDxV4UF/G/W
Min
-
-
-
-
5.3
6.4
-
-
-
-
Typ
-
-
40
3
5.6
6.8
15
9
12
6
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
300
25
5.9
7.2
18
12
15
9
Unit
V
V
nA
nA
V
V
pF
pF
pF
pF
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