PESD5V0V4UW T/R NXP Semiconductors, PESD5V0V4UW T/R Datasheet - Page 7

• Manufacturer Part Number: PESD5V0V4UW T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0V4UW T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.4 V
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Peak Surge Current: 1.7 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.3 (Max) mm W x 1.7 (Max) mm L
• Package / Case: SOT-665
• Peak Pulse Power Dissipation: 16 W
• Factory Pack Quantity: 4000
• Part # Aliases: PESD5V0V4UW,115

NXP Semiconductors
PESDXV4UF_G_W_3
Product data sheet
Fig 5. Diode capacitance as a function of reverse
Fig 7. V-I characteristics for a unidirectional ESD protection diode
(pF)
(1) PESD3V3V4UF; PESD3V3V4UG; PESD3V3V4UW
(2) PESD5V0V4UF; PESD5V0V4UG; PESD5V0V4UW
C
d
16
14
12
10
8
6
f = 1 MHz; T
voltage; typical values
0
1
amb
= 25 C
2
(1)
(2)
3
V
CL
4
V
006aaa262
V
BR
R
(V)
V
Rev. 03 — 28 January 2008
RWM
5
Very low capacitance quadruple ESD protection diode arrays
P-N
+
Fig 6. Relative variation of reverse leakage current as
I
RM(25 C)
I
I
RM
10
I
I
I
RM
R
10
PP
1
1
a function of junction temperature; typical
values
100
006aaa407
50
PESDxV4UF/G/W
V
0
50
© NXP B.V. 2008. All rights reserved.
100
006aaa263
T
j
( C)
150
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