PESD24VU1UT T/R NXP Semiconductors, PESD24VU1UT T/R Datasheet - Page 8

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PESD24VU1UT T/R

Manufacturer Part Number
PESD24VU1UT T/R
Description
TVS Diode Arrays 24V ESD PROTECTION
Manufacturer
NXP Semiconductors
Series
PESDxU1UTr
Datasheet

Specifications of PESD24VU1UT T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
27.8 V
Clamping Voltage
76 V
Operating Voltage
24 V
Peak Surge Current
5 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Capacitance
1.5 pF
Dimensions
1.4(Max) mm W x 3(Max) mm L
Package / Case
SOT-23
Peak Pulse Power Dissipation
200 W
Factory Pack Quantity
3000
Part # Aliases
PESD24VU1UT,215
NXP Semiconductors
PESDXU1UT_SER_2
Product data sheet
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxU1UT as close to the input terminal or connector as possible.
2. The path length between the PESDxU1UT and the protected line should be
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
minimized.
boards, use ground vias.
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
PESDxU1UT series
© NXP B.V. 2009. All rights reserved.
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