PESD24VU1UT T/R NXP Semiconductors, PESD24VU1UT T/R Datasheet - Page 3

• Manufacturer Part Number: PESD24VU1UT T/R
• Description: TVS Diode Arrays 24V ESD PROTECTION
• Manufacturer: NXP Semiconductors
• Series: PESDxU1UTr

Specifications of PESD24VU1UT T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 2 Channels
• Breakdown Voltage: 27.8 V
• Clamping Voltage: 76 V
• Operating Voltage: 24 V
• Peak Surge Current: 5 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 1.5 pF
• Dimensions: 1.4(Max) mm W x 3(Max) mm L
• Package / Case: SOT-23
• Peak Pulse Power Dissipation: 200 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD24VU1UT,215

NXP Semiconductors
5. Limiting values
PESDXU1UT_SER_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
P
I
T
T
T
PP
j
amb
stg
PP
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Limiting values
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
Conditions
8/20 s
8/20 s
PESDxU1UT series
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2009. All rights reserved.
Max
80
80
200
200
200
5
5
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
C
C
C
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