PESD24VU1UT T/R NXP Semiconductors, PESD24VU1UT T/R Datasheet - Page 2

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PESD24VU1UT T/R

Manufacturer Part Number
PESD24VU1UT T/R
Description
TVS Diode Arrays 24V ESD PROTECTION
Manufacturer
NXP Semiconductors
Series
PESDxU1UTr
Datasheet

Specifications of PESD24VU1UT T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
27.8 V
Clamping Voltage
76 V
Operating Voltage
24 V
Peak Surge Current
5 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Capacitance
1.5 pF
Dimensions
1.4(Max) mm W x 3(Max) mm L
Package / Case
SOT-23
Peak Pulse Power Dissipation
200 W
Factory Pack Quantity
3000
Part # Aliases
PESD24VU1UT,215
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PESDXU1UT_SER_2
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Pin
1
2
3
Type number
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Type number
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
cathode ESD protection diode
cathode compensation diode
common anode
Package
Name
-
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
Description
plastic surface mounted package; 3 leads
Marking code
*AP
*AQ
*AR
*AS
*AT
PESDxU1UT series
Simplified outline
1
[1]
3
2
Symbol
© NXP B.V. 2009. All rights reserved.
006aaa441
1
Version
SOT23
3
2
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