MT46H32M16LFBF-5 IT:B Micron Technology Inc, MT46H32M16LFBF-5 IT:B Datasheet - Page 97

• Manufacturer Part Number: MT46H32M16LFBF-5 IT:B
• Description: IC DDR SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFBF-5 IT:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. C, Production – 03/08
Rev. B, Preliminary – 12/07
Rev. A, Advance – 7/07
Revision History for Commands, Operations, and Timing Diagrams
Update – 05/08
Update – 05/08
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
• Added programmable burst length of 16 to “Features”
• Updated example cycle time to -6 in Figure 1: “512Mb Mobile DDR Part Numbering”
• Corrected Idd0 unit value to mA in Table 9, “Idd Specifications and Conditions (x32)”
• Added MAX values to Table 10, “Idd6 Specifications and Conditions”
• Added Figure 9: “Typical Idd6 Curves”
• Updated tDIPW (MIN) to 1.4ns, and tRC -54 (MIN) to 59.4 in Table 11, “Electrical Char-
• Updated note 1 and notes references in Table 12, “Target Output Drive Characteris-
• Updated note 1 and table title in Table 13, “Target Output Drive Characteristics (Three-
• Updated note 1 and deleted former note 4 in Table 14, “Target Output Drive Charac-
• Updated document status to Production
• Updated to include -54 speed grade, including:
• Updated all “TBDs” in the -5 columns of Table 8 and Table 9
• Changed Idd6A Max to 700μA and changed Idd6c to “TBD” in Table 10
• Change revision back to Rev. B
• Initial release (released as "Rev M" in error)
• Added 9mm x 13mm 90-ball package to the following:
• Updated Idd Values in Table 7: “Idd Specifications and Conditions (x16)” and Table 8:
• Added “L” low-power option to Figure 1: “512Mb Mobile DDR Part Numbering” and
acteristics and Recommended AC Operating Conditions”
tics (Full Strength)”
Quarter Strength)”
teristics (One-Half Strength)”
– “Options”
– Table 1, “Key Timing Parameters (CL = 3)”
– Figure 1: “512Mb Mobile DDR Part Numbering”
– Table 8, “Idd Specifications and Conditions (x16)”
– Table 9, “Idd Specifications and Conditions (x32)”
– Table 11, “Electrical Characteristics and Recommended AC Operating Conditions”
– “Options," Figure 1: “512Mb Mobile DDR Part Numbering,” and Figure 8: “90-Ball
“Idd Specifications and Conditions (x32)”
Table 9: “Idd6 Specifications and Conditions”
VFBGA Package (9mm x 13mm)”
97
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Revision History