MT46H32M16LFBF-5 IT:B Micron Technology Inc, MT46H32M16LFBF-5 IT:B Datasheet - Page 50

• Manufacturer Part Number: MT46H32M16LFBF-5 IT:B
• Description: IC DDR SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFBF-5 IT:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 17: Alternate Initialization with CKE LOW
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
V
V
DDQ
CK#
CKE
CK
DD
1
LOW level
LVCMOS
Notes:
Power up: V
NOP
T = 200µs
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1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-
2. NOP or DESELECT commands are required for at least 200μs.
3. Other valid commands are possible.
DD
and CK stable
t IS
t IS
FRESH command; ACT = ACTIVE command.
NOP
T0
t IH
t CH
t CL
PRE
T1
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AR
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512Mb: x16, x32 Mobile LPDDR SDRAM
Tb0
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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LMR
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LMR
Td0
© 2004 Micron Technology, Inc. All rights reserved.
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ACT
Te0
Initialization
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Don’t Care
NOP
Tf0
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