MT46H32M16LFBF-5 IT:B Micron Technology Inc, MT46H32M16LFBF-5 IT:B Datasheet - Page 39

• Manufacturer Part Number: MT46H32M16LFBF-5 IT:B
• Description: IC DDR SDRAM 512MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H32M16LFBF-5 IT:B

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 115mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 12: WRITE Command
PRECHARGE
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Note:
BA0, BA1
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time (
whether one or all banks will be precharged, and in the case where only one bank is
precharged, inputs BA0 and BA1 select the bank. Otherwise, BA0 and BA1 are treated as
“Don’t Care.” After a bank has been precharged, it is in the idle state and must be activa-
ted prior to any READ or WRITE commands being issued to that bank.
Address
1. EN AP = enable auto precharge; DIS AP = disable auto precharge.
RAS#
CAS#
WE#
CK#
CKE
A10
CS#
CK
HIGH
t
RP) after the PRECHARGE command is issued. Input A10 determines
Column
DIS AP
EN AP
Bank
Don’t Care
39
512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2004 Micron Technology, Inc. All rights reserved.
Commands