PESD3V3S4UF T/R NXP Semiconductors, PESD3V3S4UF T/R Datasheet - Page 9

• Manufacturer Part Number: PESD3V3S4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 10 A
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 110 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD3V3S4UF,115

NXP Semiconductors
8. Package outline
9. Packing information
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
[3]
Type number
PESD3V3S4UF SOT886
PESD5V0S4UF SOT886
Fig 10. Package outline PESDxS4UF (SOT886)
For further information and the availability of packing methods, see
T1: normal taping
T4: 90 rotated reverse taping
Packing methods
Package
Dimensions in mm
Rev. 01 — 17 January 2008
1.5
1.4
PESD3V3S4UF; PESD5V0S4UF
0.5
0.5
Description
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
0.40
0.32
3
2
1
Unidirectional quadruple ESD protection diode arrays
1.05
0.95
0.6
0.35
0.27
5
6
4
0.25
0.17
0.50
max
Section
[1]
04-07-22
0.04
max
13.
[2]
[3]
[2]
[3]
Packing quantity
5000
-115
-132
-115
-132
© NXP B.V. 2008. All rights reserved.
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