PESD3V3S4UF T/R NXP Semiconductors, PESD3V3S4UF T/R Datasheet - Page 11

• Manufacturer Part Number: PESD3V3S4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 10 A
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 110 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD3V3S4UF,115

NXP Semiconductors
11. Revision history
Table 10.
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Document ID
PESD3V3S4UF_PESD5V0S4UF_1 20080117
Revision history
Release date
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
Data sheet status
Product data sheet
Unidirectional quadruple ESD protection diode arrays
Change notice
-
Supersedes
-
© NXP B.V. 2008. All rights reserved.
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