PESD3V3S4UF T/R NXP Semiconductors, PESD3V3S4UF T/R Datasheet - Page 5

• Manufacturer Part Number: PESD3V3S4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD3V3S4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 5.32 V
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 10 A
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 110 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD3V3S4UF,115

NXP Semiconductors
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Fig 3. Peak pulse power as a function of exponential
Fig 5. Diode capacitance as a function of reverse
P
(pF)
(1) PESD3V3S4UF
(2) PESD5V0S4UF
(W)
C
PP
120
10
10
10
d
10
80
40
1
0
4
3
2
T
pulse duration; typical values
f = 1 MHz; T
voltage; typical values
1
0
amb
= 25 C
10
2
amb
= 25 C
(1)
(2)
10
4
2
10
6
3
006aab146
006aab147
V
t
p
R
( s)
(V)
Rev. 01 — 17 January 2008
10
PESD3V3S4UF; PESD5V0S4UF
8
4
Unidirectional quadruple ESD protection diode arrays
Fig 4. Relative variation of peak pulse power as a
Fig 6. Relative variation of reverse current as a
P
PP(25 C)
I
R(25 C)
P
PP
I
10
R
1.2
0.8
0.4
10
1
0
1
function of junction temperature; typical values
function of junction temperature; typical values
0
75
25
50
25
100
75
150
© NXP B.V. 2008. All rights reserved.
125
001aaa633
T
006aab148
T
j
( C)
j
( C)
200
175
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