BZA418A /T2 NXP Semiconductors, BZA418A /T2 Datasheet - Page 4

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BZA418A /T2

Manufacturer Part Number
BZA418A /T2
Description
TVS Diode Arrays DIODE ARRAY TAPE-11 REVERSE
Manufacturer
NXP Semiconductors
Series
BAZ418Ar
Datasheet

Specifications of BZA418A /T2

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
4 Channels
Clamping Voltage
27 V
Operating Voltage
18.9 V
Peak Surge Current
0.7 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.7 (Max) mm W x 3.1 (Max) mm L
Package / Case
SOT-457
Peak Pulse Power Dissipation
19.6 W
Factory Pack Quantity
10000
Part # Aliases
BZA418A,165
NXP Semiconductors
2002 Sep 02
handbook, halfpage
handbook, halfpage
Quadruple ESD transient voltage
suppressor
Fig.2
P
V
Fig.4
P ZSM
I ZSM
ZSM
ZSM
(W)
(A)
10
10
10
10
= V
is the non-repetitive peak reverse voltage at I
10
10
1
1
1
2
−1
−1
ZSM
Maximum non-repetitive peak reverse
current as a function of pulse time.
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
× I
ZSM
.
1
1
t p (ms)
t p (ms)
ZSM
MDA197
MDA199
.
10
10
4
handbook, halfpage
handbook, halfpage
All diodes loaded.
T
Fig.5
j
(mW)
1000
P tot
= 25 °C; f = 1 MHz.
(pF)
800
600
400
200
C d
50
40
30
20
10
0
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Fig.3 Power derating curve.
50
5
100
10
150
Product data sheet
V R (V)
BZA418A
T s (
MDA198
MDA200
o
C)
200
15

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