BZA418A /T2 NXP Semiconductors, BZA418A /T2 Datasheet - Page 3

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BZA418A /T2

Manufacturer Part Number
BZA418A /T2
Description
TVS Diode Arrays DIODE ARRAY TAPE-11 REVERSE
Manufacturer
NXP Semiconductors
Series
BAZ418Ar
Datasheet

Specifications of BZA418A /T2

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
4 Channels
Clamping Voltage
27 V
Operating Voltage
18.9 V
Peak Surge Current
0.7 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.7 (Max) mm W x 3.1 (Max) mm L
Package / Case
SOT-457
Peak Pulse Power Dissipation
19.6 W
Factory Pack Quantity
10000
Part # Aliases
BZA418A,165
NXP Semiconductors
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
T
2002 Sep 02
R
Per diode
V
V
V
I
r
S
C
j
R
dif
SYMBOL
SYMBOL
= 25 °C unless otherwise specified.
Z
F
ZSM
Z
Quadruple ESD transient voltage
suppressor
th j-s
d
thermal resistance from junction to soldering point
working voltage
forward voltage
non-repetitive peak reverse voltage I
reverse current
differential resistance
temperature coefficient of working
voltage
diode capacitance
PARAMETER
PARAMETER
I
I
V
I
I
see Fig.5
Z
F
ZSM
Z
Z
R
V
V
= 1 mA
= 200 mA
= 1 mA
= 5 mA
= 14 V
R
R
CONDITIONS
= 0.7 A; t
= 0; f = 1 MHz
= 13 V; f = 1 MHz −
3
p
one or more diodes loaded
= 1 ms
CONDITIONS
17.1
MIN.
18
14.4
TYP.
18.9
1.3
27
75
125
48
14
VALUE
Product data sheet
MAX.
125
BZA418A
V
V
V
nA
mV/K
pF
pF
UNIT
UNIT
K/W

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