PESD3V3S5UD T/R NXP Semiconductors, PESD3V3S5UD T/R Datasheet - Page 6

• Manufacturer Part Number: PESD3V3S5UD T/R
• Description: TVS Diode Arrays 3.3V 5X ESD ARRAY
• Manufacturer: NXP Semiconductors
• Series: PESDxS5UDr

Specifications of PESD3V3S5UD T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 5 Channels
• Breakdown Voltage: 5.9 V
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Peak Surge Current: 20 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Capacitance: 300 pF
• Dimensions: 1.7 (Max) mm W x 3.1 (Max) mm L
• Package / Case: SOT-457
• Peak Pulse Power Dissipation: 200 W
• Factory Pack Quantity: 3000
• Part # Aliases: PESD3V3S5UD,115

NXP Semiconductors
PESDXS5UD_SER_2
Product data sheet
Fig 5. Diode capacitance as a function of reverse
Fig 7. Relative variation of reverse leakage current as
I
RM(25 C)
I
(pF)
(1) PESD3V3S5UD
(2) PESD5V0S5UD
RM
C
10
220
180
140
100
d
60
10
1
1
f = 1 MHz; T
voltage; typical values
PESD3V3S5UD; PESD5V0S5UD
I
PESD12VS5UD; PESD15VS5UD; PESD24VS5UD
a function of junction temperature; typical
values
100
R
0
is less than 5 nA at 150 C for:
1
50
amb
= 25 C
2
0
(1)
(2)
50
3
100
4
006aaa700
006aaa699
V
T
j
R
( C)
(V)
Rev. 02 — 7 December 2006
150
5
Fig 6. Diode capacitance as a function of reverse
Fig 8. V-I characteristics for a unidirectional ESD
(1) PESD12VS5UD
(2) PESD15VS5UD
(3) PESD24VS5UD
(pF)
C
d
V
80
60
40
20
CL
0
f = 1 MHz; T
voltage; typical values
protection diode
0
V
BR
PESDxS5UD series
V
Fivefold ESD protection diode arrays
5
RWM
amb
P-N
(1)
(2)
(3)
= 25 C
10
+
15
I
I
I
I
RM
R
PP
© NXP B.V. 2006. All rights reserved.
20
006aaa701
V
R
(V)
006aaa407
25
V
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