PESD3V3S5UD T/R NXP Semiconductors, PESD3V3S5UD T/R Datasheet - Page 5

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PESD3V3S5UD T/R

Manufacturer Part Number
PESD3V3S5UD T/R
Description
TVS Diode Arrays 3.3V 5X ESD ARRAY
Manufacturer
NXP Semiconductors
Series
PESDxS5UDr
Datasheet

Specifications of PESD3V3S5UD T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
5 Channels
Breakdown Voltage
5.9 V
Clamping Voltage
12 V
Operating Voltage
3.3 V
Peak Surge Current
20 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Capacitance
300 pF
Dimensions
1.7 (Max) mm W x 3.1 (Max) mm L
Package / Case
SOT-457
Peak Pulse Power Dissipation
200 W
Factory Pack Quantity
3000
Part # Aliases
PESD3V3S5UD,115
NXP Semiconductors
PESDXS5UD_SER_2
Product data sheet
Fig 3. Peak pulse power as a function of exponential
P
(W)
PP
10
10
10
10
1
4
3
2
T
pulse duration; typical values
1
amb
= 25 C
10
Table 8.
T
[1]
[2]
Symbol Parameter
C
V
r
amb
dif
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to 2.
10
= 25 C unless otherwise specified.
2
diode capacitance
clamping voltage
differential resistance
Characteristics
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
10
3
006aaa698
t
p
( s)
Rev. 02 — 7 December 2006
10
4
…continued
Conditions
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
R
Fig 4. Relative variation of peak pulse power as a
= 5 mA
P
= 1 A
= 20 A
= 1 A
= 20 A
= 1 A
= 10 A
= 1 A
= 6 A
= 1 A
= 4 A
PP(25 C)
P
PP
1.2
0.8
0.4
0
function of junction temperature; typical values
0
R
= 0 V
PESDxS5UD series
Fivefold ESD protection diode arrays
50
[1][2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
Typ
215
165
73
60
45
-
-
-
-
-
-
-
-
-
-
-
150
© NXP B.V. 2006. All rights reserved.
001aaa633
T
j
Max
300
220
100
90
70
8
12
8
13
17
24
22
33
33
52
25
( C)
200
Unit
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
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