PESD5V0L4UF T/R NXP Semiconductors, PESD5V0L4UF T/R Datasheet - Page 7

• Manufacturer Part Number: PESD5V0L4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.46 V
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD5V0L4UF,115

NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 3. Non-repetitive peak reverse current as a
Fig 5. Diode capacitance as a function of reverse
I
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
(pF)
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
ZSM
(A)
C
10
d
10
26
22
18
14
10
1
6
1
10
T
function of pulse duration; maximum values
f = 1 MHz; T
voltage; typical values
0
amb
2
= 25 C
1
amb
10
= 25 C
1
2
(1)
(2)
3
1
(1)
(2)
Low capacitance unidirectional quadruple ESD protection diode arrays
t
p
4
006aab134
(ms)
006aab136
V
R
(V)
Rev. 04 — 28 February 2008
10
5
Fig 4. Non-repetitive peak reverse power dissipation
Fig 6. Relative variation of reverse current as a
I
R(25 C)
P
(1) PESD3V3L4UF; PESD3V3L4UG; PESD3V3L4UW
(2) PESD5V0L4UF; PESD5V0L4UG; PESD5V0L4UW
(W)
I
ZSM
R
10
10
10
10
1
1
2
10
1
T
as a function of pulse duration; maximum
values
function of junction temperature; typical values
75
amb
2
= 25 C
25
PESDxL4UF/G/W
10
1
25
75
1
(1)
(2)
© NXP B.V. 2008. All rights reserved.
125
t
p
006aab135
(ms)
006aab137
T
j
( C)
175
10
7 of 17