PESD5V0L4UF T/R NXP Semiconductors, PESD5V0L4UF T/R Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L4UF T/R
• Description: TVS Diode Arrays DIODE ARRAY ESD TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0L4UF T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Breakdown Voltage: 6.46 V
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Peak Surge Current: 2.5 A
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Package / Case: SOT-886
• Peak Pulse Power Dissipation: 30 W
• Factory Pack Quantity: 5000
• Part # Aliases: PESD5V0L4UF,115

NXP Semiconductors
6. Characteristics
PESDXL4UF_G_W_4
Product data sheet
Fig 1. 8/20 s pulse waveform according to
(%)
I
PP
120
80
40
0
IEC 61000-4-5
0
10
100 % I
Table 9.
T
Symbol Parameter
Per diode
V
I
V
RM
amb
e
RWM
BR
PP
t
; 8 s
20
= 25 C unless otherwise specified.
50 % I
reverse standoff voltage
reverse leakage current
breakdown voltage
Characteristics
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
PP
30
Low capacitance unidirectional quadruple ESD protection diode arrays
; 20 s
001aaa630
t ( s)
Rev. 04 — 28 February 2008
40
Conditions
V
V
I
R
RWM
RWM
Fig 2. ESD pulse waveform according to
= 1 mA
= 3.3 V
= 5.0 V
100 %
10 %
90 %
IEC 61000-4-2
I
PP
t
r
30 ns
PESDxL4UF/G/W
0.7 ns to 1 ns
Min
-
-
-
-
5.32
6.46
60 ns
Typ
-
-
75
5
5.6
6.8
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
300
25
5.88
7.14
001aaa631
t
Unit
V
V
nA
nA
V
V
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