IS61LV12824-10TQ ISSI, Integrated Silicon Solution Inc, IS61LV12824-10TQ Datasheet - Page 6

• Manufacturer Part Number: IS61LV12824-10TQ
• Description: IC SRAM 3MBIT 10NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10TQ

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV12824
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
6
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
RC
OHA
DOE
HZOE
LZOE
HZCE
LZCE
AA
ACE
ACE
HZCE
LZCE
2
(2)
(2)
2
(2)
(2)
2
(2)
(2)
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE1, CE2 Access Time
CE2 Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE1, CE2 to High-Z Output
CE2 to High-Z Output
CE, CE2 to Low-Z Output
CE2 to Low-Z Output
Min. Max.
—
—
8
3
8
0
0
0
3
-8
—
—
—
—
—
8
4
3
4
(1)
(Over Operating Range)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Min.
10
—
—
—
3
0
0
0
3
-10
Max.
—
10
—
10
—
—
4
3
5
Unit
ISSI
ns
ns
ns
ns
ns
ns
ns
ns
ns
06/22/05
Rev. D
®