IS61LV12824-10TQ ISSI, Integrated Silicon Solution Inc, IS61LV12824-10TQ Datasheet - Page 5

• Manufacturer Part Number: IS61LV12824-10TQ
• Description: IC SRAM 3MBIT 10NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10TQ

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV12824
CAPACITANCE
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST LOADS
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
POWER SUPPLY CHARACTERISTICS
Note:
1. At f = f
AC TEST CONDITIONS
Symbol
I
I
I
CC
SB
SB
Symbol
C
C
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
1
2
IN
OUT
OUTPUT
MAX
Parameter
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Parameter
Input Capacitance
Input/Output Capacitance
Figure 1
(1)
Z
O
= 50
Test Conditions
V
I
V
V
CE1, CE2, V
V
CE1, CE2
CE2 0.2V, V
or V
OUT
CC
CC
IN
CC
= V
IN
= Max.,
= Max.,
= Max.,
= 0 mA, f = f
IH
0.2V, f = 0
or V
See Figures 1 and 2
1.5V
V
IL
IN
IH
CC
, f = max.
50
, CE2 V
MAX
0V to 3.0V
– 0.2V,
V
CC
(1)
1.5V
Unit
2 ns
Conditions
V
– 0.2V,
V
(Over Operating Range)
OUT
IN
IL
= 0V
= 0V
Com.
Com.
Com.
Ind.
Ind.
Ind.
OUTPUT
3.3V
Min.
—
—
—
—
—
—
-8 ns
Max.
Including
6
8
Max.
jig and
210
240
scope
70
80
10
20
Figure 2
5 pF
319
Unit
pF
pF
Min.
353
—
—
—
—
—
—
-10 ns
Max.
180
210
50
55
10
20
ISSI
Unit
mA
mA
mA
®
5
1
2
3
4
5
6
7
8
9
10
11
12