IS61LV12824-10TQ ISSI, Integrated Silicon Solution Inc, IS61LV12824-10TQ Datasheet - Page 4

• Manufacturer Part Number: IS61LV12824-10TQ
• Description: IC SRAM 3MBIT 10NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10TQ

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV12824
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
4
OPERATING RANGE
Symbol
V
V
T
T
P
I
OUT
Mode
Not Selected
Output Disabled
Read
Write
STG
BIAS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
Symbol
V
V
V
V
I
I
Note:
1. V
CC
TERM
T
Range
Commercial
Industrial
LI
LO
OH
OL
IH
IL
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
V
IL
IH
(min.) = –0.3V DC; V
(max.) = V
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Power Dissipation
DC Output Current
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
CC
+ 0.3V DC; V
Ambient Temperature
–40°C to +85°C
0°C to +70°C
IL
WE
WE
WE
WE
WE
(min.) = –2.0V AC (pulse width 2.0 ns).
X
X
X
H
H
L
IH
(1)
(max.) = V
CE1
CE1
CE1
CE1
CE1
H
X
X
L
L
L
(1)
Test Conditions
V
V
GND
GND
CC
CE2
CC
CC
X
X
H
H
H
L
+ 2.0V AC (pulse width
= Min., I
= Min., I
3.3V + 10%, – 5%
3.3V + 10%, – 5%
Com.
(Over Operating Range)
Ind.
V
V
CE2
CE2
CE2
CE2
CE2
V
IN
OUT
H
X
X
L
L
L
CC
OH
OL
(8 ns)
V
CC
V
= 8.0 mA
= –4.0 mA
CC
OE
OE
OE
OE
OE
X
X
X
H
X
L
–0.5 to Vcc + 0.5
, Outputs Disabled
Integrated Silicon Solution, Inc. — 1-800-379-4774
–65 to + 150
–10 to + 85
–45 to + 90
–0.5 to 5.0
Value
±20
2.0
2.0 ns).
I/O0-I/O23
High-Z
High-Z
D
D
OUT
3.3V ± 10%
3.3V ± 10%
IN
V
CC
(10 ns)
Unit
mA
°C
°C
°C
W
V
V
Vcc Current
I
Min.
–0.3
SB
2.4
2.2
—
–1
–1
1
I
I
I
CC
CC
CC
, I
SB
2
V
CC
Max.
0.4
0.8
—
ISSI
1
1
+ 0.3
Unit
06/22/05
µA
µA
Rev. D
V
V
V
V
®