BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 8

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.02
0.001
0.0001
Figure 19. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
Figure 17. DC Current Gain vs. Collector
I
Figure 21. Collector Saturation Region
C
10 mA
/I
I
C
B
=
= 20
I
20 mA
C
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.1
=
0.01
I
0.001
B
Collector Current
, BASE CURRENT (mA)
I
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
C
= 50 mA
Current
SBC847BPDW1T1G Series, BC848CPDW1T1G
1.0
T
A
I
C
0.1
= 25°C
0.01
= 100 mA
I
C
= 200 mA
V
CE
= 5 V
http://onsemi.com
−55°C
150°C
25°C
10
20
1
0.1
8
0.30
0.25
0.20
0.15
0.10
0.05
2.4
2.8
1.0
1.2
1.6
2.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.2
0
0.0001
0.0001
Figure 18. Collector Emitter Saturation Voltage
Figure 20. Base Emitter Voltage vs. Collector
-55°C to +125°C
I
C
V
Figure 22. Base−Emitter Temperature
/I
CE
B
= 20
= 5 V
I
I
C
C
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
0.001
1.0
Coefficient
Current
10
0.01
0.01
−55°C
150°C
25°C
25°C
150°C
−55°C
100
0.1
0.1