BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 2

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

1. FR−5 = 1.0 x 0.75 x 0.062 in.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (NPN)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Total Device Dissipation Per Device
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure
FR−5 Board (Note 1)
T
Derate above 25°C
(I
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
A
C
C
C
E
C
C
C
C
C
C
C
C
C
C
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
BC846, SBC846 Series
BC847B, SBC847B Only
BC848 Series
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
BC846, SBC846 Series
BC847, SBC847 Series
BC848 Series
CB
CB
BC846B, SBC846B, BC847B, SBC847B
BC848C
BC846B, SBC846B, BC847B, SBC84B7
BC848C
= 25°C
= 10 mA)
= 10 mA, V
= 10 mA)
= 1.0 mA)
= 10 mA, V
= 2.0 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2.0 mA, V
= 10 mA, V
= 10 mA, V
= 0.2 mA, V
= 30 V)
= 30 V, T
B
B
EB
CE
A
CE
CE
B
B
CE
CE
CE
= 0.5 mA)
= 0.5 mA)
= 150°C)
= 5.0 mA)
= 5.0 mA)
= 0)
= 5.0 V)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 5.0 V)
= 5.0 Vdc, R
CB
= 10 V, f = 1.0 MHz)
Characteristic
SBC847BPDW1T1G Series, BC848CPDW1T1G
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)CES
(BR)EBO
I
CE(sat)
BE(sat)
C
BE(on)
h
CBO
NF
f
obo
FE
T
Min
200
420
580
100
6.0
6.0
5.0
Symbol
65
45
30
80
50
30
80
50
30
T
−
−
−
−
−
−
−
−
−
−
−
R
J
P
, T
qJA
D
stg
Typ
150
270
290
520
660
0.7
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−55 to +150
Max
380
250
328
3.0
Max
0.25
475
800
700
770
5.0
0.6
4.5
15
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mW/°C
mW/°C
°C/W
Unit
mW
°C
Unit
MHz
mV
nA
mA
dB
pF
V
V
V
V
V
V
−