BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 7

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

8.0
6.0
4.0
2.0
20
10
40
-0.1 -0.2
-0.5
V
Figure 15. Capacitance
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-2.0
C
SBC847BPDW1T1G Series, BC848CPDW1T1G
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
ib
-5.0
C
ob
-10
-20
T
J
= 25°C
-50
http://onsemi.com
-100
7
500
200
100
50
20
Figure 16. Current−Gain − Bandwidth Product
V
CE
= -5.0 V
-1.0
I
C
, COLLECTOR CURRENT (mA)
-10
-100