BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 14

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

1000
900
800
700
600
500
400
300
200
100
-2.0
-1.6
-1.2
-0.8
-0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.001
0.0001
Figure 43. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
I
-10 mA
-0.02
C
Figure 41. DC Current Gain vs. Collector
I
=
C
Figure 45. Collector Saturation Region
/I
B
= 20
I
C
I
C
, COLLECTOR CURRENT (A)
I
-0.1
, COLLECTOR CURRENT (A)
C
0.01
0.001
= -20 mA
Collector Current
I
B
, BASE CURRENT (mA)
Current
SBC847BPDW1T1G Series, BC848CPDW1T1G
I
C
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
= -50 mA
-1.0
0.1
0.01
T
A
= 25°C
−55°C
150°C
I
25°C
C
I
V
C
CE
= -200 mA
= -100 mA
= 5 V
http://onsemi.com
-10
-20
1
0.1
14
0.30
0.25
0.20
0.15
0.10
0.05
1.0
1.2
1.6
2.0
2.4
2.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.0001
0.0001
Figure 42. Collector Emitter Saturation Voltage
Figure 44. Base Emitter Voltage vs. Collector
-0.2
I
-55°C to +125°C
C
V
Figure 46. Base−Emitter Temperature
/I
CE
B
= 20
= 5 V
I
I
C
C
I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
-1.0
0.001
Coefficient
Current
-10
0.01
0.01
−55°C
150°C
25°C
25°C
150°C
−55°C
-100
0.1
0.1