PZTA14 /T3 NXP Semiconductors, PZTA14 /T3 Datasheet - Page 3

• Manufacturer Part Number: PZTA14 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of PZTA14 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Maximum Dc Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000 at 10 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: PZTA14,135

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Apr 14
R
R
I
I
I
h
V
V
f
j
CBO
CES
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEon
NPN Darlington transistor
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter on-state voltage
transition frequency
PARAMETER
PARAMETER
I
V
I
V
I
I
E
C
C
C
C
BE
CE
I
I
= 0; V
= 0; V
= 100 mA; I
= 100 mA; V
= 10 mA; V
C
C
= 0; V
= 5 V; (see Fig.2)
= 10 mA
= 100 mA
3
CB
EB
CE
CONDITIONS
= 30 V
= 10 V
= 30 V
CE
B
CE
= 0.1 mA
= 5 V; f = 100 MHz
note 1
= 5 V
CONDITIONS
−
−
−
10 000
20 000
−
−
125
MIN.
VALUE
100
19
100
100
100
−
−
1.5
2
−
Product data sheet
MAX.
PZTA14
UNIT
K/W
K/W
2
nA
nA
nA
V
V
MHz
.
UNIT