PZTA14,115 NXP Semiconductors, PZTA14,115 Datasheet

TRANS NPN 30V 500MA SOT223

PZTA14,115

Manufacturer Part Number
PZTA14,115
Description
TRANS NPN 30V 500MA SOT223
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PZTA14,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
1.25W
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Configuration
Single Dual Collector
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.1 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
30V
Emitter-base Voltage (max)
10V
Collector-emitter Saturation Voltage
1.5@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933982050115
PZTA14 T/R
PZTA14 T/R
Product data sheet
Supersedes data of 1997 Sep 04
DATA SHEET
handbook, halfpage
PZTA14
NPN Darlington transistor
M3D087
DISCRETE SEMICONDUCTORS
1999 Apr 14

Related parts for PZTA14,115

PZTA14,115 Summary of contents

Page 1

DATA SHEET handbook, halfpage PZTA14 NPN Darlington transistor Product data sheet Supersedes data of 1997 Sep 04 DISCRETE SEMICONDUCTORS M3D087 1999 Apr 14 ...

Page 2

... NXP Semiconductors NPN Darlington transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • Pre-amplifiers requiring high input impedance. DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complement: PZTA64. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ...

Page 3

... NXP Semiconductors NPN Darlington transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook” ...

Page 4

... NXP Semiconductors NPN Darlington transistor 80000 handbook, full pagewidth h FE 60000 40000 20000 0 − 1999 Apr Fig.2 DC current gain; typical values. 4 Product data sheet PZTA14 MGD837 (mA) ...

Page 5

... NXP Semiconductors NPN Darlington transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 0.10 0.80 3.1 mm 1.5 0.01 0.60 2.9 OUTLINE VERSION IEC SOT223 1999 Apr scale 0.32 6.7 3 ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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