PZTA 14 E6327 Infineon Technologies, PZTA 14 E6327 Datasheet
PZTA 14 E6327
Specifications of PZTA 14 E6327
SP000010688
Related parts for PZTA 14 E6327
PZTA 14 E6327 Summary of contents
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NPN Silicon Darlington Transistor • For general AF applications • High collector current • High current gain • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking PZTA14 PZTA14 1=B Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-base breakdown voltage I = 100 µ Collector-emitter breakdown voltage I = 100 µ Emitter-base breakdown voltage µ ...
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I DC current gain PZTA 13/ 125 ˚ ˚C 5 -55 ˚ ...
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I Transition frequency 200 MHz CE PZTA 13/ MHz Total power dissipation P 1650 mW ...
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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...