PN2907A T/R NXP Semiconductors, PN2907A T/R Datasheet - Page 7

• Manufacturer Part Number: PN2907A T/R
• Description: Transistors Bipolar - BJT PNP SW 600MA 60V
• Manufacturer: NXP Semiconductors

Specifications of PN2907A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 75 at 0.1 mA at 10 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2907A,116

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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R75/03/pp7
Date of release: 2004 Oct 11
Document order number: 9397 750 13621