PN2907A T/R NXP Semiconductors, PN2907A T/R Datasheet - Page 4

• Manufacturer Part Number: PN2907A T/R
• Description: Transistors Bipolar - BJT PNP SW 600MA 60V
• Manufacturer: NXP Semiconductors

Specifications of PN2907A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 75 at 0.1 mA at 10 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2907A,116

NXP Semiconductors
2004 Oct 11
handbook, full pagewidth
Switching times (between 10 % and 90 % levels); see Fig.2
t
t
t
t
t
t
SYMBOL
on
d
r
off
s
f
PNP switching transistor
V
R1 = 68 Ω; R2 = 325 Ω; R
V
Oscilloscope: input impedance Z
i
BB
= −9.5 V; T = 500 µs; t
= 3.5 V; V
turn-on time
delay time
rise time
turn-off time
storage time
fall time
CC
= −29.5 V.
p
B
PARAMETER
= 10 µs; t
= 325 Ω; R
i
= 50 Ω.
r
= t
C
oscilloscope
f
≤ 3 ns.
= 160 Ω.
V i
Fig.2 Test circuit for switching times.
(probe)
450 Ω
I
I
Con
Boff
R1
R2
= 15 mA
= −150 mA; I
R B
V BB
4
CONDITIONS
R C
V CC
Bon
DUT
= −15 mA;
V o
MGD624
(probe)
450 Ω
oscilloscope
−
−
−
−
−
−
MIN.
Product data sheet
40
12
30
365
300
65
MAX.
PN2907A
ns
ns
ns
ns
ns
ns
UNIT