PN2907A T/R NXP Semiconductors, PN2907A T/R Datasheet - Page 3

• Manufacturer Part Number: PN2907A T/R
• Description: Transistors Bipolar - BJT PNP SW 600MA 60V
• Manufacturer: NXP Semiconductors

Specifications of PN2907A T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.6 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 75 at 0.1 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 75 at 0.1 mA at 10 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: PN2907A,116

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Oct 11
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
V
C
C
f
SYMBOL
SYMBOL
SYMBOL
amb
C
CM
BM
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
BEsat
PNP switching transistor
th(j-a)
c
e
= 25 °C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient note 1
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
PARAMETER
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
I
I
I
V
V
V
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CE
CB
EB
CE
= −150 mA; I
= −500 mA; I
= −150 mA; I
= −150 mA; I
= −5 V; I
= −2 V; I
= −50 V; I
= −50 V; I
= −10 V; I
= −10 V; I
= −10 V; I
= −10 V; I
= −10 V; I
= −10 V; I
= −20 V; I
open emitter
open base
open collector
T
3
amb
CONDITIONS
C
C
≤ 25 °C
E
E
C
C
C
C
C
E
C
= 0 A
= i
B
B
B
B
= 0 A
= 0 A; T
= −0.1 mA
= −1 mA
= −10 mA
= −150 mA
= −500 mA
= i
= −50 mA; f = 100 MHz 200
CONDITIONS
CONDITIONS
= −15 mA
= −50 mA
= −15 mA
= −50 mA
c
e
= 0 A; f = 1 MHz
= 0 A; f = 1 MHz
j
= 125 °C
−
−
−
−
−
−
−
−65
−
−65
−
−
−
75
100
100
100
50
−
−
−
−
−
−
MIN.
MIN.
VALUE
250
Product data sheet
−60
−60
−5
−600
−800
−200
500
+150
150
+150
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
MAX.
MAX.
PN2907A
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
nA
µA
nA
mV
V
V
V
pF
pF
MHz
UNIT
UNIT