IS42S32200E-7TLI ISSI, Integrated Silicon Solution Inc, IS42S32200E-7TLI Datasheet - Page 33

• Manufacturer Part Number: IS42S32200E-7TLI
• Description: IC SDRAM 64MBIT 143MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200E-7TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 86-TSOPII
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 143 MHz
• Access Time: 5.5 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 140 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 706-1082; IS42S32200E-7TLI

IS42S32200E, IS45S32200E
DC RECOMMENDED OPERATING CONDITIONS
(T
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
07/12/2010
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
4. V
5. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device opera-
6. The parameter is characterized.
a
V
P
V
Symbol
V
V
V
I
T
T
= 0°C to +70°C for Com. grade. T
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
tion is ensured. (Vdd and VddQ must be powered up simultaneously. GND and GNDQ must be at same potential.) The two
AUTO REFRESH command wake-ups should be repeated anytime the t
cs
Symbol
opr
out
stg
ih
il
dd max
ddq max
iN
d max
dd
iN1
iN2
(min) = GND – 1.2V with a pulse < 3 ns. The pluse width cannot be greater than one third of the cycle rate.
V
(max) = V
V
, V
ih
il
ddq
ddq
Parameter
Input Capacitance: (CLK)
Input Capacitance: (All other input only pins)
Data Input/Output Capacitance: DQ0-DQ31
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
+ 1.2V with a pulse width ≤ 3 ns. The pluse width cannot be greater than one third of the cycle rate.
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
a
= -40°C to +85°C for Ind. and A1 grade, T
(4)
(3)
(1)
(2, 6)
Min.
-0.3
3.0
2.0
(At T
Com.
a
Ind.
A1:
A2:
= 0 to +25°C, V
Typ.
3.3
—
—
(2,5)
V
a
dd
= -40°C to +105°C for A2 grade)
ref
Max.
+0.8
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–40 to +105
–55 to +150
3.6
–40 to +85
–40 to +85
+ 0.3
0 to +70
refresh requirement is exceeded.
Rating
dd
50
1
= V
ddq
Unit
V
V
V
= 3.3 ± 0.3V, f = 1 MHz)
Unit
mA
°C
°C
W
V
V
V
V
Typ.
—
—
—
Max.
6
6
6
Unit
pF
pF
pF
33