BCV63 T/R NXP Semiconductors, BCV63 T/R Datasheet - Page 8

• Manufacturer Part Number: BCV63 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63,215

NXP Semiconductors
12. Soldering
BCV63_63B
Product data sheet
Fig 7.
Fig 8.
4.6
(3×)
0.7
0.7
2.575
Reflow soldering footprint SOT143B
Wave soldering footprint SOT143B
(3×)
0.6
0.6
All information provided in this document is subject to legal disclaimers.
0.75
(3×)
(3×)
0.6
0.5
0.9
1
Rev. 4 — 4 August 2010
3.25
1.9
4.45
2.2
1.2
0.95
(3×)
1.2
1
2
NPN general-purpose double transistors
3
1.425
1.425
(3×)
preferred transport direction during soldering
BCV63; BCV63B
Dimensions in mm
Dimensions in mm
© NXP B.V. 2010. All rights reserved.
solder lands
solder resist
solder paste
occupied area
solder lands
solder resist
occupied area
sot143b_fr
sot143b_fw
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