BCV63 T/R NXP Semiconductors, BCV63 T/R Datasheet - Page 11

• Manufacturer Part Number: BCV63 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV63 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV63,215

NXP Semiconductors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
BCV63_63B
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 August 2010
[e-mail]
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
NPN general-purpose double transistors
BCV63; BCV63B
© NXP B.V. 2010. All rights reserved.
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