BCV 61B E6433 Infineon Technologies, BCV 61B E6433 Datasheet
BCV 61B E6433
Specifications of BCV 61B E6433
Related parts for BCV 61B E6433
BCV 61B E6433 Summary of contents
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NPN Silicon Double Transistor • used as a current mirror • Good thermal coupling and V • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking BCV61B ...
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Electrical Characteristics at T Parameter DC Characteristics of T1 Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µA, ...
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Electrical Characteristics at T Parameter Characteristics Base-emitter forward voltage µ 250 mA E Matching of transistor T1 and transistor 0.5mA and CE1 °C ...
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Test circuit for current matching A Ι ... CE1 Note: Voltage drop at contacts: V Characteristic for determination parameter under condition Ι ...
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Collector-base capacitance C Emitter-base capacitance CEB Permissible pulse load totmax totDC p BCV 61 3 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...
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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...