MZ0912B100Y TRAY NXP Semiconductors, MZ0912B100Y TRAY Datasheet - Page 9

• Manufacturer Part Number: MZ0912B100Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-443A
• Maximum Power Dissipation: 290000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B100Y,114

Philips Semiconductors
PACKAGE OUTLINES
1997 Feb 20
handbook, full pagewidth
NPN microwave power transistors
Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.
3.3
2.9
3.3
0.15 max
seating plane
8.25
Fig.10 SOT439A.
12.85 max
23 max
16.5
max
3.7
9
3
2
1
MX0912B100Y; MZ0912B100Y
1.6 max
9.85
max
MBC881
max
6
10.3
10.0
min
min
2.7
2.7
Product specification