MZ0912B100Y TRAY NXP Semiconductors, MZ0912B100Y TRAY Datasheet - Page 6

• Manufacturer Part Number: MZ0912B100Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-443A
• Maximum Power Dissipation: 290000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B100Y,114

Philips Semiconductors
List of components
1997 Feb 20
handbook, full pagewidth
L1
L2
C1
C2
C3
C4
C5, C6
COMPONENT
NPN microwave power transistors
0.65 mm diameter copper wire
4 turns 0.65 mm diameter
copper wire
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
DESCRIPTION
1 s
1 s
300 s
3 ms
Fig.6 Pulse definition.
100 pF
10 F; 50 V
470 F; 63 V
0.6 to 4.5 pF
VALUE
6
total length = 12 mm;
height of loop = 12 mm
int. dia. 3 mm; L = 5 mm
MX0912B100Y; MZ0912B100Y
DIMENSIONS
MGK066
ATC, ref. 100A101KP50X
Erie, ref. 1250-003
Tekelec, ref. 727.1
CATALOGUE NO.
Product specification