MZ0912B100Y TRAY NXP Semiconductors, MZ0912B100Y TRAY Datasheet - Page 3

• Manufacturer Part Number: MZ0912B100Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B100Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 6 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-443A
• Maximum Power Dissipation: 290000 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B100Y,114

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1997 Feb 20
handbook, halfpage
V
V
V
V
I
P
T
T
T
C
stg
j
sld
CBO
CES
CEO
EBO
tot
NPN microwave power transistors
SYMBOL
t
Fig.3
p
= 10 s;
P tot
(W)
300
200
100
0
50
Maximum power dissipation derating as a
function of mounting-base temperature.
= 10 %; P
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
(peak power)
storage temperature
operating junction temperature
soldering temperature
0
tot max
= 290 W.
PARAMETER
100
T mb ( C)
MGL046
200
open emitter
R
open base
open collector
t
t
T
up to 0.2 mm from ceramic;
t
p
p
mb
BE
10 s
10 s;
10 s;
= 75 C
= 0
3
CONDITIONS
10 %
10 %;
MX0912B100Y; MZ0912B100Y
65
MIN.
65
60
20
3
6
290
+200
200
235
Product specification
MAX.
V
V
V
V
A
W
C
C
C
UNIT