BCV64B T/R NXP Semiconductors, BCV64B T/R Datasheet - Page 6

• Manufacturer Part Number: BCV64B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV64B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV64B,215

NXP Semiconductors
8. Application information
9. Test information
BCV64B
Product data sheet
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 5.
Schmitt trigger application
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
TR2
R c
1
3
R2
V
i
4
PNP general-purpose double transistor
R1
TR1
2
3
R c
mgd828
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© NXP B.V. 2010. All rights reserved.
BCV64B
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