BCV64B T/R NXP Semiconductors, BCV64B T/R Datasheet - Page 4

• Manufacturer Part Number: BCV64B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV64B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV64B,215

NXP Semiconductors
7. Characteristics
BCV64B
Product data sheet
Table 8.
T
[1]
[2]
[3]
Symbol
Per transistor
I
V
V
Transistor TR1
h
V
V
V
f
C
Transistor TR2
h
V
V
CBO
T
j
FE
FE
CEsat
BEsat
CEsat
BEsat
BE
CEsat
BE
c
= 25
Due to matched dies, h
V
V
BEsat
BE
°
C unless otherwise specified.
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Parameter
collector-base
cut-off current
collector-emitter
saturation voltage
base-emitter
saturation voltage
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
collector capacitance
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
Characteristics
All information provided in this document is subject to legal disclaimers.
FE
Rev. 4 — 2 August 2010
values for TR2 are the same as for TR1.
Conditions
V
V
T
I
I
I
I
V
I
I
I
I
I
I
V
I
V
V
I
f = 100 MHz
V
I
f = 1 MHz
V
I
I
I
I
V
C
B
C
B
C
C
B
C
B
C
C
C
E
C
C
B
C
j
CB
CB
CE
CE
CE
CE
CB
CE
CE
= 150 °C
= −0.5 mA
= −0.5 mA
= −5 mA
= −5 mA
= i
= −5 mA
= −10 mA;
= −10 mA;
= −2 mA
= −100 mA;
= −100 mA;
= −2 mA;
= −10 mA;
= −10 mA;
= −2 mA
= −100 mA;
= −2 mA;
= −30 V; I
= −30 V; I
= −5 V;
= −5 V
= −5 V
= −5 V;
= −10 V;
= −700 mV;
= −700 mV
e
= 0 A;
E
E
PNP general-purpose double transistor
= 0 A
= 0 A;
[2]
[2]
[3]
[3]
[1]
[3]
Min
-
-
-
-
220
-
-
−600
-
100
-
220
-
-
Typ
-
-
−75
−700
-
−250
−850
−650
-
-
4
-
−250
−700
© NXP B.V. 2010. All rights reserved.
BCV64B
Max
−15
−5
−300
-
475
−650
-
−750
−820
-
-
475
-
-
Unit
nA
μA
mV
mV
mV
mV
mV
mV
MHz
pF
mV
mV
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