BCV64B T/R NXP Semiconductors, BCV64B T/R Datasheet - Page 2

• Manufacturer Part Number: BCV64B T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV64B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV64B,215

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BCV64B
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
1
2
3
4
Type number
BCV64B
Type number
BCV64B
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
base TR2
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 2 August 2010
Description
plastic surface-mounted package; 4 leads
Marking code
*C6
PNP general-purpose double transistor
Simplified outline
4
1
[1]
2
3
Graphic symbol
© NXP B.V. 2010. All rights reserved.
BCV64B
TR1
3
2
TR2
Version
SOT143B
006aab230
1
4
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