BCV49 /T3 NXP Semiconductors, BCV49 /T3 Datasheet - Page 4

• Manufacturer Part Number: BCV49 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCV49 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Maximum Dc Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 2000 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCV49,135

NXP Semiconductors
CHARACTERISTICS
T
2004 Dec 06
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
FE
CEsat
BEsat
BEon
NPN Darlington transistors
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage I
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
BCV29
BCV49
BCV29
BCV49
PARAMETER
I
I
I
V
V
I
I
I
E
E
C
C
C
C
C
CE
CE
I
I
I
I
I
I
I
I
= 0 A; V
= 0 A; V
= 0 A; V
= 100 mA; I
= 100 mA; I
= 10 mA; V
= 30 mA; V
C
C
C
C
C
C
C
C
= 5 V; see Fig.2
= 5 V; see Fig.2
= 1 mA
= 10 mA
= 100 mA
= 500 mA
= 1 mA
= 10 mA
= 100 mA
= 500 mA
4
CB
CB
EB
CONDITIONS
= 30 V
= 60 V
= 10 V
CE
CE
B
B
= 0.1 mA
= 0.1 mA
= 5 V
= 5 V; f = 100 MHz −
−
−
−
4 000
10 000 −
20 000 −
4 000
2 000
4 000
10 000 −
2 000
−
−
−
MIN.
BCV29; BCV49
−
−
−
−
−
−
−
−
−
−
−
220
TYP.
Product data sheet
100
100
100
−
−
−
−
−
−
−
−
1
1.5
1.4
−
MAX. UNIT
nA
nA
nA
V
V
V
MHz