BCV49 /T3 NXP Semiconductors, BCV49 /T3 Datasheet - Page 2

• Manufacturer Part Number: BCV49 /T3
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCV49 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Maximum Dc Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 2000 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-89-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 4000
• Part # Aliases: BCV49,135

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• High DC current gain (min. 20 000).
APPLICATIONS
• Preamplifier input applications.
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
ORDERING INFORMATION
2004 Dec 06
BCV29
BCV49
BCV29
BCV49
TYPE NUMBER
NPN Darlington transistors
TYPE NUMBER
NAME
SC-62
MARKING CODE
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
EG
EF
2
PINNING
DESCRIPTION
PACKAGE
Fig.1
PIN
1
2
3
3
Simplified outline (SOT89) and symbol.
emitter
collector
base
2
1
DESCRIPTION
BCV29; BCV49
3
Product data sheet
TR1
VERSION
2
1
sym087
SOT89
TR2