MAC97A8/DG,116 NXP Semiconductors, MAC97A8/DG,116 Datasheet - Page 5
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MAC97A8/DG,116
Manufacturer Part Number
MAC97A8/DG,116
Description
Triacs 600V BI-DIRECT 0.6A
Manufacturer
NXP Semiconductors
Datasheet
1.MAC97A8DG412.pdf
(13 pages)
Specifications of MAC97A8/DG,116
Rohs
yes
On-state Rms Current (it Rms)
0.6 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
100 uA
Holding Current (ih Max)
10 mA
Gate Trigger Voltage (vgt)
2 V
Gate Trigger Current (igt)
5 mA
Mounting Style
Through Hole
Package / Case
TO-92-3
Factory Pack Quantity
2000
NXP Semiconductors
6. Characteristics
Table 6.
T
MAC97A8_A6
Product data sheet
Symbol
Static characteristics
I
I
V
V
I
Dynamic characteristics
dV
dV
t
I
GT
L
H
D
gt
j
T
GT
= 25
D
com
/dt
/dt
C unless otherwise specified
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state leakage current
critical rate of rise of
off-state voltage
critical rate of rise of
commutation voltage
gate controlled turn-on
time
Conditions
V
V
V
I
V
V
V
V
T
waveform; gate open circuit;
Figure 12
V
I
commutating dI/dt = 0.3 A/ms
I
I
T
TM
TM
G
All information provided in this document is subject to legal disclaimers.
case
D
D
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 0.85 A;
= 25 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 67% of V
= rated V
= 0.84 A;
= 1.0 A; V
= 110 C; exponential
DRM
DRM (max)
Rev. 2 — 14 September 2011
; I
T
GT
GT
T
Figure 11
T
DRM
= 0.1 A;
= 0.1 A;
D
= 0.1 A; T
G
DM(max)
= 0.1 A;
= 0.1 A;
; T
= V
/dt = 5 A/s
; T
j
DRM(max)
= 110 C
case
;
Figure 8
Figure 7
Figure 9
Figure 10
= 50 C;
j
= 110 C
;
MAC97A8; MAC97A6
Min
0.1
30
Typ
1
2
2
4
1
5
1
2
1
1.4
0.9
0.7
3
45
5
2
© NXP B.V. 2011. All rights reserved.
Max
5
5
5
7
10
10
10
10
10
1.9
2
100
Logic level triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
A
V/s
V/s
s
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