MAC97A8/DG,116 NXP Semiconductors, MAC97A8/DG,116 Datasheet - Page 3
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MAC97A8/DG,116
Manufacturer Part Number
MAC97A8/DG,116
Description
Triacs 600V BI-DIRECT 0.6A
Manufacturer
NXP Semiconductors
Datasheet
1.MAC97A8DG412.pdf
(13 pages)
Specifications of MAC97A8/DG,116
Rohs
yes
On-state Rms Current (it Rms)
0.6 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
100 uA
Holding Current (ih Max)
10 mA
Gate Trigger Voltage (vgt)
2 V
Gate Trigger Current (igt)
5 mA
Mounting Style
Through Hole
Package / Case
TO-92-3
Factory Pack Quantity
2000
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
MAC97A8_A6
Product data sheet
Symbol Parameter
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
repetitive peak off-state voltage
on-state current (RMS value)
non-repetitive peak on-state current
I
repetitive rate of rise of on-state
current after triggering
gate current (peak value)
gate voltage (peak value)
gate power (peak value)
average gate power
storage temperature
operating junction temperature
2
Limiting values
t for fusing
MAC97A8
MAC97A6
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 September 2011
t = 2 s max
t = 2 s max
T
Conditions
T
T
full sine wave; T
full sine wave; T
t 10 ms
I
t = 2 s max
TM
j
j
case
t = 20 ms
t = 16.7 ms
T2+ G+
T2+ G
T2 G
T2 G+
= 25 to 125 C
= 25 to 125 C
= 1.0 A; I
= 80 C; t = 2 s max
G
= 0.2 A; dI
lead
j
= 25 C prior to surge
50 C;
MAC97A8; MAC97A6
G
/dt = 0.2 A/s
Figure 5
Min
40
40
© NXP B.V. 2011. All rights reserved.
Logic level triac
Max
600
400
0.6
8.0
8.8
0.32
50
50
50
10
1
5
5
0.1
+150
+125
Unit
V
V
A
A
A
A
A/s
A/s
A/s
A/s
V
W
W
C
C
2
3 of 13
s