PUMB9,125 NXP Semiconductors, PUMB9,125 Datasheet - Page 3

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PUMB9,125

Manufacturer Part Number
PUMB9,125
Description
Transistors Switching - Resistor Biased
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMB9,125

Rohs
yes
NXP Semiconductors
5. Limiting values
PEMB9_PUMB9
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Symbol
Per transistor
V
V
V
V
I
I
P
Per device
P
T
T
T
O
CM
j
amb
stg
CBO
CEO
EBO
I
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
positive
negative
PEMB9 (SOT666)
PUMB9 (SOT363)
PEMB9 (SOT666)
PUMB9 (SOT363)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
 1 ms
 25 C
 25 C
PEMB9; PUMB9
[1][2]
[1][2]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
© NXP B.V. 2011. All rights reserved.
Max
50
50
6
+6
40
100
100
200
200
300
300
150
+150
+150
Unit
V
V
V
V
V
mA
mA
mW
mW
mW
mW
C
C
C
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