PBSS4160PANP,115 NXP Semiconductors, PBSS4160PANP,115 Datasheet - Page 18

• Manufacturer Part Number: PBSS4160PANP,115
• Description: Transistors Bipolar - BJT 60V 1A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 125 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 175 MHz, 125 MHz
• Dc Collector/base Gain Hfe Min: 290, 245
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 430, 245
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
12. Package outline
13. Soldering
14. Revision history
Table 8.
PBSS4160PANP
Product data sheet
Fig. 30. Package outline DFN2020-6 (SOT1118)
Fig. 31. Reflow soldering footprint for DFN2020-6 (SOT1118)
Data sheet ID
PBSS4160PANP v.1
Revision history
2.25
0.875
0.875
Release date
20130114
0.35
0.45
(6×)
(6×)
2.1
1.9
Dimensions in mm
0.65
0.77
0.57
0.54
0.44
(2×)
(2×)
0.49
All information provided in this document is subject to legal disclaimers.
2.1
3
1
0.3
0.2
0.49
Data sheet status
Product data sheet
0.65
0.72
0.82
(2×)
(2×)
14 January 2013
2.1
1.9
1.1
0.9
4
6
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
1.05
(6×)
(2×)
0.3
0.65
0.35
0.25
(4×)
(6×)
1.15
(6×)
(2×)
0.4
Change notice
-
0.65
max
10-05-31
0.04
max
Dimensions in mm
PBSS4160PANP
solder lands
solder paste
solder resist
occupied area
sot1118_fr
Supersedes
-
© NXP B.V. 2013. All rights reserved
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